| PART |
Description |
Maker |
| IRFIZ48G IRFIZ48 IRFIZ48GPBF |
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A)
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) 功率MOSFET（减振钢板基本\u003d 60V的，的Rdson）\u003d 0.018ohm，身份证\u003d 37A条）
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
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International Rectifier, Corp.
IRF[International Rectifier]
|
| FAN1086D-2.85 FAN1086S-3.3 FAN1086S-2.5 FAN1086M-2 |
Neuron ICs; Max. Input Clock: 20 MHz; EEPROM: 2 KB; RAM: 2 KB; ROM: 16 KB; Package: 32 pin SOP; External Memory I/F: No
; Sensitivity dBµmV: 93 ~ 107; Package: SSOP16; Production Status: MP
FETs Nch 30VFETs Nch 30VPhase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP
FETs Nch 30VFETs Nch 30VFETs Nch 30VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (Ω): (max 0.018) (max 0.013) (max 0.012); I_S (A): (max 6)
FETs Nch 30VFETs Nch 30VFETs Nch 30VFETs Nch 30VTHREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS
积极的固定电压稳压器
FETs Nch 30V<VDSS=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45)
FETs Nch 30V<VDSS=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)
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| IRFD014 |
Power MOSFET(Vdss=60V/ Rds(on)=0.20ohm/ Id=1.7A)
Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=1.7A)
60V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier
|
| IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR |
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFR9024PBF IRFU9024PBF |
HEXFET POWER MOSFET ( VDSS = -60V , RDS(on) = 0.28Ω , ID = -8.8A )
HEXFET POWER MOSFET ( VDSS = -60V , RDS(on) = 0.28ヘ , ID = -8.8A )
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http://
International Rectifier
|
| IRFIZ48V IRFIZ48 IRFIZ48VPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A)
|
IRF[International Rectifier]
|
| IRFZ48V IRFZ48VPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A)
|
IRF[International Rectifier]
|
| RJF0618JPE |
60V-40A Silicon N Channel Thermal FET Power Switching
|
Renesas Electronics Corporation
|
| IRFIZ34V IRFIZ34VPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=60V, Rds(on)=28mohm, Id=20A)
Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
|
IRF[International Rectifier]
|
| TK70X04K3Z |
Power MOSFET (N-ch single 30V<VDSS≤60V)
|
TOSHIBA
|
| TK42E12N1 |
Power MOSFET (N-ch single 60V<VDSS≤150V)
|
TOSHIBA
|
